<p><em><span>第四代N沟道器件降低导通和开关损耗，提高能效</span></em></p>
<p><span>宾夕法尼亚、MALVERN</span><span><span> </span>—<span> </span></span><span>2020年1</span><span>2</span><span>月23日</span><span><span> </span>—<span> </span></span><span>日前，Vishay Intertechnology,</span><span><span> </span>Inc.（NYSE 股市代号：VSH）</span><span>宣布，推出最新</span><span>第四代</span><span>600 V EF</span><span>系列快速体二极管</span><span>MOSFET</span><span><span> </span>器件-</span><span>--</span><a href="http://www.vishay.com/ppg?92290"><span>SiHH070N60EF</span></a><span>。</span><span>Vishay Siliconix n沟道</span><a href="http://www.vishay.com/ppg?92290"><span>SiHH070N60EF</span></a><span>导通电阻比</span><span>其</span><span>前代器件低29 %，</span><span>为通信、工业、</span><span>计算</span><span>和企业级电源应用提供高效解决方案，同时栅极电荷下降60 %，从而使器件导通电阻与栅极电荷乘积，</span><span>即功率转换应用中</span><span>600 V MOSFET</span><span>的重要优值系数（</span><span>FOM</span><span>）创业界新低。</span></p>
<p><span>Vishay</span><span>提供丰富的MOSFET技术支持各级功率转换，涵盖高压输入到低压输出的各种最新高科技系统。随着</span><span>SiHH070N60EF</span><span>的推出，以及即将发布的第四代</span><span>600 V EF</span><span>系列产品，</span><span>Vishay</span><span>可满足电源系统架构设计前两个阶段提高能效和功率密度的要求—包括图腾柱无桥功率因数校正</span><span>（</span><span>PFC</span><span>）</span><span>和软切换DC/DC转换器拓扑结构。</span></p>
<p><span>SiHH070N60EF</span><span>基于</span><span>Vishay最新高能效E系列超结技术，10 V条件下典型导通电阻仅为</span><span>0.061<span> </span></span><span>Ω</span><span>，超低栅极电荷降至</span><span>50 nC</span><span>。器件的FOM为3.1<span> </span></span><span>Ω</span><span>*nC，比同类最接近的MOSFET低</span><span>30 %</span><span>。这些参数表明导通和开关损耗</span><span>降</span><span>低，从而节省能源。</span><span>SiHH070N60EF</span><span>有效输出电容</span><span>C</span><span>o(er)</span><span>和</span><span>C</span><span>o(tr)</span><span>分别仅为</span><span>90 pf</span><span>和</span><span>560 pF</span><span>，可改善零电压开关</span><span>（</span><span>ZVS</span><span>）</span><span>拓扑结构开关性能，如</span><span>LLC</span><span>谐振转换器</span><span>。器件的</span><span>C</span><span>o(tr)</span><span><span> </span></span><span>比同类紧随其后的MOSFET低</span><span>3</span><span>2</span><span><span> </span>%</span><span>。</span></p>
<p><span>日前发布的器件采用</span><span>PowerPAK</span><span>®</span><span><span> </span>8x8</span><span>封装，符合</span><span>RoHS</span><span>标准，无卤素，耐受雪崩模式过压瞬变，并保证极限值100 %通过UIS测试。</span></p>
<p><span>SiHH070N60EF</span><span>现可提供样品并已实现量产，供货周期为10周。</span></p>
<p><span>VISHAY简介</span></p>
<p><span>Vishay 是全球最大的分立半导体和无源电子元件系列产品制造商之一，这些产品对于汽车、工业、计算、消费、通信、国防、航空航天和医疗市场的创新设计至关重要。服务于全球客户，Vishay承载着科技基因——</span><span>The DNA of tech</span><span><span>Ô</span></span><span>。Vishay Intertechnology, Inc. 是在纽约证券交易所上市（VSH）的“财富1,000 强企业”。有关Vishay的详细信息，敬请浏览网站<span> </span></span><a href="http://www.vishay.com/"><span>www.vishay.com</span></a><span>。</span></p>